On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD |
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| Authors: | S. Due as, H.Cast n, H. Garcí a, J. Barbolla, E. San Andr s, I. M rtil,G. Gonz lez-Dí az |
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| Affiliation: | aDepartamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Universidad de Valladolid, Campus “Miguel Delibes”, 47011 Valladolid, Spain;bDepartamento de Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid, Spain |
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| Abstract: | We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance–voltage (C–V) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G–t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model. |
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