| 低介电常数多孔二氧化硅薄膜的制备与性能研究 |
| |
| 引用本文： | 李靓,姚熹,张良莹.低介电常数多孔二氧化硅薄膜的制备与性能研究[J].固体电子学研究与进展,2005,25(4):549-553. |
| |
| 作者姓名： | 李靓 姚熹 张良莹 |
| |
| 作者单位： | 同济大学功能材料研究所,上海,200092 |
| |
| 基金项目： | 国家重点基础研究发展计划资助项目（2002CB613304）;上海市科委纳米中心资助项目（0152NM038）;上海市重点学科建设资助项目 |
| |
| 摘 要： | 利用Sol-Gel的方法制备了多孔二氧化硅薄膜。通过优化薄膜制备工艺,实现了多孔二氧化硅薄膜厚度在450nm～3000nm范围内可控,薄膜孔率为59%。用FTIR光谱分析了不同热处理温度下多孔二氧化硅薄膜的化学结构。研究了多孔二氧化硅薄膜的介电常数、介电损耗、漏电流等电学性能,结果表明多孔二氧化硅薄膜本征的介电常数为1.8左右,是典型的低介电常数材料。并通过原子力显微镜对薄膜的表面形貌进行了表征。
|
| 关 键 词： | 多孔二氧化硅薄膜 Sol-Gel 低介电常数 电学性能 |
| 文章编号： | 1000-3819(2005)04-549-05 |
| 收稿时间： | 11 21 2003 12:00AM |
| 修稿时间： | 03 3 2004 12:00AM |
Preparation and Characterization of Low Dielectric Constant Porous Sillica Films |
| |
| LI Liang,YAO Xi,ZHANG Liangying.Preparation and Characterization of Low Dielectric Constant Porous Sillica Films[J].Research & Progress of Solid State Electronics,2005,25(4):549-553. |
| |
| Authors: | LI Liang YAO Xi ZHANG Liangying |
| |
| Abstract: | The Sol-Gel method is employed to prepare porous sillica films. By optimization of the fabrication process, porous silica films with thickness in the ragne of 450 nm～3 000 nm can be derived.Porosity of the films up to 59% and nanometer pore size can be achieved by one spin coating after annealed at 550 °C for 30 mins. The chemical species and chemical bonding state of the films are investigated using a Fourier transform infrared spectroscopy (FT-IR). The electrical properties of porous sillica films, such as dielectric constant, dielectric loss, leakage current are measured. Experiment results show that the dielectric constant of porous sillica films is about 1.8 and that the films are a typical low- k material. The surface condition of porous silica films are charactered by AFM. |
| |
| Keywords: | porous silica film Sol-Gel low-k electrical properties |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
