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| Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究 | |
| 引用本文： | 陆映东,常永勤,张敬民,王明文,郭佳林,王永威,龙毅. Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究[J]. 功能材料, 2011, 42(11) |
| 作者姓名： | 陆映东 常永勤 张敬民 王明文 郭佳林 王永威 龙毅 |
| 作者单位： | 1. 北京科技大学材料科学与工程学院,北京,100083 2. 北京大学物理学院,北京,100080 3. 北京科技大学应用学院,北京,100083 |
| 基金项目： | 国家自然科学基金资助项目(50502005); 教育部新世纪优秀人才资助项目(NCET-07-0065); 北京市自然科学基金资助项目(1092014) |
| 摘 要： | 采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。 |
| 关 键 词： | Ga掺杂ZnO纳米线 光致发光 化学气相沉积 |
Fabrication and photoluminescence of Ga doped ZnO nanowires with Sn as catalyst |
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| LU Ying-dong,CHANG Yong-qin,ZHANG Jing-min,WANG Ming-wen,GUO Jia-lin,WANG Yong-wei,LONG Yi. Fabrication and photoluminescence of Ga doped ZnO nanowires with Sn as catalyst[J]. Journal of Functional Materials, 2011, 42(11) | |
| Authors: | LU Ying-dong CHANG Yong-qin ZHANG Jing-min WANG Ming-wen GUO Jia-lin WANG Yong-wei LONG Yi |
| Affiliation: | LU Ying-dong1,CHANG Yong-qin1,ZHANG Jing-min2,WANG Ming-wen3,GUO Jia-lin1,WANG Yong-wei1,LONG Yi1(1.School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China,2.Department of Physics,Peking University,Beijing 100080,3.School of Applied Science,China) |
| Abstract: | Ga doped ZnO nanowires with large length-diameter ratio were synthesized by chemical vapor deposition method using Sn catalyst.The diameter of the nanowires is around 25-90nm.Room temperature photoluminescence results of the Ga doped ZnO nanowires show that the intensity of the ultra violet emission increases,and the position of the ultra violet emission shift to short wavelength with the doping of Ga.While the blue-shift degree decrease with Ga doping,and turn to red-shift with heavy doping.The doping of S... |
| Keywords: | Ga doped ZnO nanowires photoluminescence chemical vapor deposition |
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