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| 新型MPCVD装置在高功率密度下高速沉积金刚石膜 | |
| 引用本文： | 于盛旺,李晓静,张思凯,范朋伟,黑鸿君,唐伟忠,吕反修. 新型MPCVD装置在高功率密度下高速沉积金刚石膜[J]. 功能材料, 2011, 42(9) |
| 作者姓名： | 于盛旺 李晓静 张思凯 范朋伟 黑鸿君 唐伟忠 吕反修 |
| 作者单位： | 北京科技大学材料科学与工程学院,北京,100083 |
| 基金项目： | 国家自然科学基金资助项目(10675017) |
| 摘 要： | 使用自行研制的新型MPCVD装置,以H2-CH4为气源,在输入功率为5kW,沉积压力分别为13.33、26.66kPa和不同的甲烷浓度下制备了金刚石膜。利用等离子体发射光谱法对等离子体中的H原子和含碳的活性基团浓度进行了分析。用扫描电镜、激光拉曼谱对金刚石膜的表面和断口形貌、金刚石膜的品质等进行了表征。实验结果表明,使用新型MPCVD装置能够在较高的功率密度下进行金刚石膜的沉积;提高功率密度能使等离子体中H原子和含碳活性基团的浓度明显增加,这将提高金刚石膜的沉积速度,并保证金刚石膜具有较高的质量。 |
| 关 键 词： | 新型MPCVD装置 金刚石膜 功率密度 生长速率 |
Deposition of polycrystalline diamond films by a new type MPCVD reactor at high power density |
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| YU Sheng-wang,LI Xiao-jing,ZHANG Si-kai,FAN Peng-wei,HEI Hong-jun,TANG Wei-zhong,LV Fan-xiu. Deposition of polycrystalline diamond films by a new type MPCVD reactor at high power density[J]. Journal of Functional Materials, 2011, 42(9) | |
| Authors: | YU Sheng-wang LI Xiao-jing ZHANG Si-kai FAN Peng-wei HEI Hong-jun TANG Wei-zhong LV Fan-xiu |
| Affiliation: | YU Sheng-wang,LI Xiao-jing,ZHANG Si-kai,FAN Peng-wei,HEI Hong-jun,TANG Wei-zhong,LV Fan-xiu(School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China) |
| Abstract: | Polycrystalline diamond films were grown by using H2-CH4 as the source gas in a new type microwave plasma CVD reactor with an input power of 5kW,gas pressure of 13.33 and 26.66kPa and different methane concentrations.Optical emission spectroscopy was used to evaluate the concentrations of H atoms and carbon active groups in the plasma.The surface morphology,fracture morphology and the quality of the films were examined by using scanning electron microscope and Raman spectrum.Experimental results showed that... |
| Keywords: | new type of MPCVD reactor polycrystalline diamond films power density growth rate |
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