|
|||||
|
|
| 离子束辅助沉积(IVD)方法制备Ag/Si薄膜 | |
| 引用本文： | 潘显政,何新明,王滨,章利球. 离子束辅助沉积(IVD)方法制备Ag/Si薄膜[J]. 核技术, 1987, 0(1) |
| 作者姓名： | 潘显政 何新明 王滨 章利球 |
| 作者单位： | 武汉大学(潘显政，何新明，王滨)，武汉大学(章利球) |
| 摘 要： | 离子束辅助沉积(以下简称IVD)方法是将离子束技术与真空沉积薄膜技术相结合的一种新的制膜方法。它具有沉积速率高、薄膜吸附强度大、薄膜外延温度低并能消除膜应力等优点。因此,近年来在国际上受到重视和发展。 |
| 关 键 词： | 离子束辅助沉积法 Ag/Si薄膜 |
The Ag/Si thin film prepared by using ion assisted deposition |
|
| Pan Xianzheng He Xinming Wang Bin Zhang Liqiu. The Ag/Si thin film prepared by using ion assisted deposition[J]. Nuclear Techniques, 1987, 0(1) | |
| Authors: | Pan Xianzheng He Xinming Wang Bin Zhang Liqiu |
| Affiliation: | Wuhan University |
| Abstract: | The method of ion assisted vapour deposition (IAD or IVD) for preparing thin films is described in this paper. The comparison of the Ag/Si thin film prepared by IVD with those prepared by conventional vacuum vapour deposition have been mace. The interface ion mixing of Ag-Si, and the surface microstructure of the Ag/Si thin films are measured by RBS, TEM SEM etc. |
| Keywords: | ion assisted deposition Ag/Si thin film |
| 本文献已被 CNKI 等数据库收录！ | |