2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

In this paper we present a new approach to calculate the channel electric field within a Schottky barrier Double-Gate MOSFET (SB-DG-MOSFET) in subthreshold region by solving Poissons equation. The Poisson equation is solved two dimensionally in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by TCAD Sentaurus simulator for channel lengths down to 22 nm was made and shows an accurate agreement. Futhermore, a new way for the estimation of the tunneling current in SB-DG-MOSFET by applying the above 2D solution for the electric field and a 2D solution of the electrostatic potential is presented. Calculating the tunneling current, we use Wentzel-Kramers-Brillouin (WKB) approximation for the estimation of the tunneling probability. For the calculation of the tunneling and thermionic current a comparison with TCAD Sentaurus for channel lengths down to 65 nm was made.