High-speed GaN growth and compositional control of GaN-AlGaNsuperlattice quasi-ternary compounds by RF-radical source molecular beamepitaxy |
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| Authors: | Kishino K. Kikuchi A. Yoshizawa M. Fujita N. Kushi K. Sasamoto H. |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo; |
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| Abstract: | Novel growth technologies of III-nitrides for fabricating optical devices by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE) were investigated. A relatively high-growth rate, up to 1.4 μm/h of GaN with high-electrical and high-optical quality was obtained. The concept of AlGaN quasi-ternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Using the QT technology, a GaN-Al0.07Ga0.933N-Al0.3Ga0.7 N multiquantum-well heterostructure was fabricated to show the effectiveness of the method |
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