Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films |
| |
| Authors: | A. I. Dmitriev R. B. Morgunov O. L. Kazakova |
| |
| Affiliation: | 1.Institute of Problems of Chemical Physics,Russian Academy of Sciences,Chernogolovka, Moscow oblast,Russia;2.National Physical Laboratory,Teddington,UK |
| |
| Abstract: | It is established that annealing of ion-implanted thin Ge0.96Mn0.04 films with a thickness of 120 nm induces an increase in the microwave resistivity and a change in the mechanism of dephasing
of charge carriers. The effect of annealing on the microwave transport properties of the thin films is due to the diffusion-controlled
aggregation of dispersed Mn2+ impurity ions to form Ge3Mn5 clusters. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
