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Optical and structural properties of MOVPE grown GaxIn1?xAs/InP strained multiple quantum well atructures |
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| Authors: | R Meyer Hilde Hardtdegen R Carius D Grützmacher M Stollenwerk P Balk A Kux B Meyer |
| Affiliation: | 1. Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik, 5170, Jülich, Germany 2. Institut für Halbleitertechnik, Technische Hochschule Aachen, 5100, Aachen, Germany 3. Physik-Department, Technische Universit?t München, 8046, Garching, Germany |
| Abstract: | This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements. |
| Keywords: | Strained layer epitaxy GaInAs multiple quantum well monolayer fluctuations |
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