| SiGe/Si HBT高频噪声特性研究 |
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| 引用本文： | 张万荣,邱建军,金冬月,张静,张正元,刘道广,王健安,徐学良,陈光炳. SiGe/Si HBT高频噪声特性研究[J]. 微电子学, 2006, 36(1): 27-29 |
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| 作者姓名： | 张万荣 邱建军 金冬月 张静 张正元 刘道广 王健安 徐学良 陈光炳 |
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| 作者单位： | 1. 北京工业大学,电子信息与控制工程学院,北京,100022
2. 模拟集成电路国家重点实验室,重庆,400060 |
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| 基金项目： | 国家重点实验室基金;中国科学院资助项目;北京市优秀人才培养基金 |
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| 摘 要： | 基于器件Y参数,对Si/Si1-xGexHBT的高频噪声进行了模拟。Si/Si1-xGexHBT的高频最小噪声系数随Ge组份x的增加而减小。与Si BJT相比,Si/SiGe HBT具有优异的高频噪声特性。
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| 关 键 词： | SiGe 异质结晶体管 高频噪声 |
| 文章编号： | 1004-3365（2006）01-0027-03 |
| 收稿时间： | 2005-04-26 |
| 修稿时间： | 2005-04-262005-06-23 |
High-Frequency Noise Characteristics of Si/SiGe HBT''''s |
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| ZHANG Wan-rong,QIU Jian-jun,JIN Dong-yue,ZHANG Jing,ZHANG Zheng-yuan,LIU Dao-guang,WANG Jian-an,XU Xue-liang,CHEN Guang-bing. High-Frequency Noise Characteristics of Si/SiGe HBT''''s[J]. Microelectronics, 2006, 36(1): 27-29 |
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| Authors: | ZHANG Wan-rong QIU Jian-jun JIN Dong-yue ZHANG Jing ZHANG Zheng-yuan LIU Dao-guang WANG Jian-an XU Xue-liang CHEN Guang-bing |
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| Affiliation: | 1. School of Electronic Information and Control Engineering. Beijing University of Technology. Beijing.100022. P. R. China; 2. National Laboratory of Analog Integrated Circuits, Chongqing, 400060, P. R. China |
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| Abstract: | Based on Y parameters of device,high-frequency noise characteristics of Si/Si_(1-x)Ge_x HBT's is simulated.As the Ge fraction increases,the high-frequency minimum noise figure of Si/Si_(1-x)Ge_x HBT decreases.The results show that Si/SiGe HBTs have excellent high-frequency noise characteristics,compared with Si BJT. |
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| Keywords: | SiGe HBT High-frequency noise |
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