Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy |
| |
| Authors: | Dobbelaere W. de Boeck J. van Hove M. Deneffe K. de Raedt W. Mertens R. Borghs G. |
| |
| Affiliation: | Interuniv. Micro-Electron. Center, Leuven, Belgium; |
| |
| Abstract: | InAs/sub 0.05/Sb/sub 0.95/ photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420 V/W at 77 K and 300 meV photon energy with a load resistor of 100 Omega and a bias voltage of 1.5 V.<> |
| |
| Keywords: | |
|
