Room‐Temperature Solution‐Synthesized p‐Type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics |
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Authors: | Ao Liu Huihui Zhu Won‐Tae Park Seok‐Ju Kang Yong Xu Myung‐Gil Kim Yong‐Young Noh |
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Affiliation: | 1. Department of Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea;2. Department of Chemistry, Chung‐Ang University, Seoul, Republic of Korea |
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Abstract: | Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µFE) of 0.44 cm2 V?1 s?1 and on/off current ratio of 5 × 102. Furthermore, µFE increases to 1.93 cm2 V?1 s?1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution‐processed inorganic p‐type semiconductor inks and related electronics. |
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Keywords: | inorganic p‐type semiconductor low voltage room‐temperature synthesis solution process thin‐film transistor |
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