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Optical,Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method |
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| Authors: | Tataroğlu A. Al-Sehemi Abdullah G. Ilhan M. Al-Ghamdi Ahmed A. Yakuphanoglu F. |
| Affiliation: | 1.Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey ;2.Department of Chemistry, Faculty of Science, King Khalid University, Abha, 61413, P.O. Box 9004, Saudi Arabia ;3.Research Center for Advanced Materials Science, King Khalid University, Abha, 61413, P.O. Box 9004, Saudi Arabia ;4.Unit of Science and Technology, Faculty of Science, King Khalid University, Abha, 61413, P.O. Box 9004, Saudi Arabia ;5.Department of Physics, Faculty of Arts and Sciences, Firat University, 23169, Elazig, Turkey ;6.Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah, Saudi Arabia ; |
| Abstract: | Silicon - The Ti1−xO2NixO films (x = 0.0, 0.05, 0.10 and 0.15) with various NiO contents were prepared by sol-gel technique. The prepared films were coated on n-Si substrate by spin coating... |
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