| MOCVD实现InGaAsP波导对接生长的研究 |
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| 引用本文： | 张瑞康,董雷,余永林,王定理,张靖,陈磊,江山.MOCVD实现InGaAsP波导对接生长的研究[J].半导体学报,2008,29(6):1177-1179. |
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| 作者姓名： | 张瑞康 董雷 余永林 王定理 张靖 陈磊 江山 |
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| 作者单位： | [1]武汉光迅科技股份有限公司,武汉430074 [2]山东大学信息科学与工程学院,济南250100 [3]华中科学技术大学武汉国家光电实验室,武汉430074 [4]武汉大学物理科学与技术学院声光材料与器件教育部重点实验室,武汉430072 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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国家重点基础研究发展计划(973计划)
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国家自然科学基金 |
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| 摘 要： | 采用低压MOCVD技术,通过对接界面和对接工艺的优化,获得了高质量的InGaAsP材料构成的对接波导,测量得到的对接波导光学损耗为7cm-1,说明该技术可以用来制作高质量的光电子集成器件.
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| 关 键 词： | MOCVD 对接生长 波导 |
| 修稿时间： | 12/5/2007 8:07:11 PM |
Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy |
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| Zhang Ruikang,Dong Lei,Yu Yonglin,Wang Dingli,Zhang Jing,Chen Lei and Jiang Shan.Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J].Chinese Journal of Semiconductors,2008,29(6):1177-1179. |
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| Authors: | Zhang Ruikang Dong Lei Yu Yonglin Wang Dingli Zhang Jing Chen Lei and Jiang Shan |
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| Affiliation: | Accelink Technologies Co,Ltd,Wuhan 430074,China;Accelink Technologies Co,Ltd,Wuhan 430074,China;School of Information Science and Engineering,Shandong University,Jinan 250100,China;Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China;Accelink Technologies Co,Ltd,Wuhan 430074,China;Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education,Department of Physics,Wuhan University, Wuhan 430072,China;Accelink Technologies Co,Ltd,Wuhan 430074,China;Accelink Technologies Co,Ltd,Wuhan 430074,China;Accelink Technologies Co,Ltd,Wuhan 430074,China |
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| Abstract: | An InGaAsP waveguide is integrated laterally to MQW using LP-MOCVD butt-joint technology. High quality for the regrowth interface and material is achieved.The loss of the butt-jointed waveguide is 7cm-1.This demonstrates the applicability of butt-joint technology in fabricating high quality future photonic integrated circuits. |
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| Keywords: | MOCVD butt-joint growth waveguide |
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