LiF作电子注入缓冲层对有机电致发光器件电容的影响

已经有多种方法分析了LiF作为电子注入缓冲层对有机电致发光器件的影响,用LiF/Al双层阴极和发光层Alq3制成的有机电致发光器件(OLED),可以降低器件的开启电压,提高器件的发光效率、发光亮度。文章主要对OLEDs(A):Al/Alq3/ITO和(B):Al/LiF(1nm)/Alq3/ITO的C-V特性进行了研究,当在阴极和发光层Alq3之间加上1nm厚的LiF层作为电子注入缓冲层以后,器件的电容由不加LiF时的72500pF减小到12500pF,由于电容的减小,有效地降低了器件的功耗,进而提高了器件的寿命,节约了能源,进一步改善了器件的性能。

Effect of LiF on Capacitance of OLEDs

Numerical methods have been used to analyze the contribution of LiF layer which is inserted between the cathode and the electron-transporting layer in organic light emitting devices (OLEDs). The LiF as the electron injection buffer layer can improve the performance of the OLEDs, including reducing the cut-in voltage, increasing the current and emitting luminance. This work fabricates two different kinds of devices A and B with structures of Indium Tin Oxide (ITO)/tris-(8-hydroxyquinoline) aluminum (Alq3)/Al and ITO/Alq3/LiF/Al, using the C-V characteristic to analyze the roles of LiF in OLEDs and finding the capacitance of the device A and B is 72500 pF and 12500 pF, respectively. At the same time, this paper interprets why LiF could reduce the capacitance and the power consumption of the OLEDs from the correct point of view. It shows that the LiF layer improves the performance of the OLEDs and saves the energy sources, resulting in the change of the capacitance of the devices.