| HgCdTe阳极硫化膜分析 |
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| 引用本文： | 史衍丽 曾戈虹. HgCdTe阳极硫化膜分析[J]. 红外技术, 1996, 18(5): 5-7 |
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| 作者姓名： | 史衍丽 曾戈虹 |
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| 作者单位： | 昆明物理研究所 |
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| 摘 要： | 采用含水硫化的方法对ｐ型ＨｇＣｄＴｅ材料进行了表面钝化。ＸＰＳ分析结果表明，Ｈｇ０．７３４Ｃｄ０．２６６Ｔｅ表面形成了ＣｄＳ薄膜，膜层里含有少量的Ｔｅ和Ｈｇ不含氧。
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| 关 键 词： | HgCdTe 阳极硫化 X射线 光电子能谱 |
Analysis of HeCdTe Anodic Sulfide Film |
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| Shi Yanli and Zeng Gehong. Analysis of HeCdTe Anodic Sulfide Film[J]. Infrared Technology, 1996, 18(5): 5-7 |
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| Authors: | Shi Yanli and Zeng Gehong |
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| Affiliation: | Kunming Institute of Physics Kunming 650223 |
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| Abstract: | The surface of p-type of HgCdTe is passivated by anodic sulfidization in sulfide aqueoussolutions.The results of X-ray photoelectron spectroscopy analsis analysis show that cadmium sulfide filmwith a little amount of Hg, Te is formed HgCdTe surface and free of oxygen. |
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| Keywords: | HgCdTe Anodic sulfidization X-ray photoelectron spectrum |
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