| 高k电介质及其设备 |
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| 引用本文： | 翁寿松. 高k电介质及其设备[J]. 电子工业专用设备, 2008, 37(2): 7-10 |
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| 作者姓名： | 翁寿松 |
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| 作者单位： | 无锡市罗特电子有限公司,江苏,无锡,214001 |
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| 摘 要： | "2007年11月,英特尔量产高k电介质45nm微处理器"。它表明高k电介质/金属栅极技术已商业化。它可确保摩尔定律至少再延续10年。但是,ITRS2006修正版指出,高k电介质/金属栅极在低静态功耗(LSTP)逻辑IC的预期应用时间是2008年,高k电介质/金属栅极在高性能和低功耗(LOP)IC的预期应用时间是2010年。制造高k电介质的设备是化学气相沉积(CVD)或原子层沉积(ALD)设备。制造金属栅极的设备是物理气相沉积(PVD)和ALD设备。
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| 关 键 词： | 高k电介质 金属栅极 氧化铪 设备 |
| 文章编号： | 1004-4507（2008）02-0007-04 |
| 收稿时间： | 2008-02-19 |
| 修稿时间： | 2008-02-19 |
High-k Dielectric and its Equipment |
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| WENG Shou-song. High-k Dielectric and its Equipment[J]. Equipment for Electronic Products Marufacturing, 2008, 37(2): 7-10 |
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| Authors: | WENG Shou-song |
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| Abstract: | Intel has mass produced 45nm MPU with high dielectrics in November 2007, It indicates that the producing technique for high k dielectrics metal-gate has achieved commercialization. This will enable Moore's law to continue at least 10 years. ITRS 2006 expects the application of high k dielectrics /metal-gate at low static state power(LSTP ) logic IC will be in 2008, and high k dielectrics/metal-gate upon high performance and low power(LOP)IC will be in 2010. The equipment for making high k dielectric are CVD or ALD tools, for metal-gate are PVD and ALD tools. |
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| Keywords: | High-k dielectric Metal gate HfO2 HfSiOJHfSiON Equipment |
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