| 铁电电容模型及其在铁电存储器中的应用 |
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| 引用本文： | 王岸如,汤庭鳌,程旭,汤祥云. 铁电电容模型及其在铁电存储器中的应用[J]. 微电子学, 2001, 31(6): 414-417,421 |
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| 作者姓名： | 王岸如 汤庭鳌 程旭 汤祥云 |
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| 作者单位： | 复旦大学电子工程系, |
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| 基金项目： | 国家自然科学基金 (6 9876 0 0 8)，AM基金，国防科技预研基金项目 |
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| 摘 要： | 近年来，集成铁电学（integrated ferroelectrics)迅速发展。铁电体是一种特殊的电介质，在不存在外场的情况下，它仍然可以保持一个自发的极化强度。其极化方向在外电场的作用下可以发生反转，表现出特殊的非线性介电行为，即电滞回线。文章讨论了铁电电容模型的SPICE实现。首先介绍电容模型的实现，然后结合2T－2C铁电存储单元的工作原理，验证了该模型。最后，给出了一个完整的32位铁电存储器的电路仿真结果。该结果可以非常容易地推广到更大容量的铁电存储器中。
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| 关 键 词： | 集成铁电学 铁电存储器 铁电电容模型 |
| 文章编号： | 1004-3365(2001)06-0414-04 |
Implementation of a Ferroelectric Capacitor in Ferroelectric Random Access Memory |
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| WANG An ru,TANG Ting ao,CHENG Xu,TANG Xiang yun. Implementation of a Ferroelectric Capacitor in Ferroelectric Random Access Memory[J]. Microelectronics, 2001, 31(6): 414-417,421 |
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| Authors: | WANG An ru TANG Ting ao CHENG Xu TANG Xiang yun |
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| Abstract: | The application of ferroelectric thin film for semiconductor memories has been intensively studied for years because of the potential advantages of nonvolatility, high speed, high density, high reliability, increased endurance, low power dissipation, radiation hardness as well as the technology compatibility with the conventional CMOS process The implementation of an SPICE model for ferroelectric capacitor has been discussed in detail, with its verification based on a 2T/2C FeRAM cell's operation Finally, results from simulation of a 32 bit FeRAM are presented |
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| Keywords: | Integrated ferroelectrics Ferroelectrics FeRAM Ferroelectric capacitor SPICE model |
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