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PAHFCVD金刚石膜表面形貌的研究
引用本文:付强,石玉龙,丁发柱.PAHFCVD金刚石膜表面形貌的研究[J].青岛科技大学学报,2005,26(6):513-516.
作者姓名:付强  石玉龙  丁发柱
作者单位:青岛科技大学材料与环境科学学院 山东青岛266042
基金项目:国家自然科学基金资助项目(50273016)
摘    要:采用等离子辅助热丝化学气相沉积(PAHFCVD)装置进行了金刚石薄膜、碳化钛/金刚石复合膜、掺硼金刚石薄膜的制备。制备条件分别为:V(CH)4∶V(H2)=3∶100,载气流量5~50 cm3.s─1,钛源钛酸异丙酯(TiOC3H7]4),硼源硼酸三甲酯(BC3O4H9),基体温度820~860℃,基体偏压300 V,沉积气压4 kPa。运用扫描电子显微镜(SEM)、X射线衍射(XRD)和能量扩散电子谱(EDX)等分析手段对PAHFCVD金刚石膜、金刚石复合膜和掺硼金刚石膜进行了表征。结果发现,金刚石/碳化钛膜和掺硼金刚石膜主要晶面为(111)面。

关 键 词:金刚石  等离子体热丝化学气相沉积  复合膜
文章编号:1672-6987(2005)06-0513-03
修稿时间:2004年12月1日

The Study on Surface Morphology of Diamond Film Deposited by PAHFCVD
FU Qiang,SHI Yu-long,DING Fa-zhu.The Study on Surface Morphology of Diamond Film Deposited by PAHFCVD[J].Journal of Qingdao University of Science and Technology:Natutral Science Edition,2005,26(6):513-516.
Authors:FU Qiang  SHI Yu-long  DING Fa-zhu
Abstract:Diamond,diamond/TiC composite and boron doped diamond films were deposited by plasma assistant hot-filament chemical vapor deposition(PAHFCVD).The H_(2) flow rate was 200 cm~(3)·s~(-1),the ratio of CH_(4)to H_(2) was 3∶100;the carrying gas flow rate was 5~50 cm~(3)·s~(-1),TiOC_(3)H_(7)]_(4) and BC_(3)O_(4)H_(9) were used as titanium and boron resources,respectively,the deposition temperature was 820~860 ℃,the bias voltage of the sample was 300 V and the deposition pressure was 4 kPa.SEM,XRD and EDX were carried out to investigate the surface characteristics of the films.We found that the crystallites of diamond/TiC and boron doped diamond films grew mainly along the \ axis.
Keywords:diamond  PAHFCVD  composite film  
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