| HgCdTe光伏器件反常I－V特性分析 |
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| 引用本文： | 曾戈虹,孙娟,严隆. HgCdTe光伏器件反常I－V特性分析[J]. 红外技术, 1996, 0(6) |
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| 作者姓名： | 曾戈虹 孙娟 严隆 |
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| 作者单位： | 昆明物理研究所 |
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| 摘 要： | 对ＨｇＣｄＴｅ光伏器件研制中出现的光电二极管伏安特性反常现象提出了寄生ｐ－ｎ结模型，并以此模型为基点，结合工艺实验对此现象进行了解释和分析。
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| 关 键 词： | 光伏器件，I－V特性，寄生p－n结 |
Analysis of Current-Voltage Characteristics of the HgCdTe Diodes with a Parasite p-n Junction |
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| Zeng Gehong, Sun Juan and Yan Long. Analysis of Current-Voltage Characteristics of the HgCdTe Diodes with a Parasite p-n Junction[J]. Infrared Technology, 1996, 0(6) |
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| Authors: | Zeng Gehong Sun Juan Yan Long |
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| Abstract: | A model is propose for analyzing the Current-Voltage characteristics of the HgCdTe diode with a parasite p-n junction. The true value of this model is fully confirmed with HgCdTe diodefabrication results. |
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| Keywords: | HgCdTe diode I-V characteristic Parasite p-n junction |
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