Some physical properties of ZnO thin films prepared by RF sputtering technique |
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| Authors: | N Ekem S Korkmaz S Pat MZ Balbag EN Cetin M Ozmumcu |
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| Affiliation: | 1. Eskisehir Osmangazi University, Physics Department, 26480 Meselik, Eskisehir, Turkey;2. Eskisehir Osmangazi University, Education Faculty, Physics Education, 26480 Meselik, Eskisehir, Turkey |
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| Abstract: | ZnO thin films were deposited with RF sputtering using pure Zn target. In order to generate oxidation process of Zn, Ar:O2 gas mixing in (9:1), (7:3) and (5:5) ratios of Ar:O2 was used. To characterize ZnO thin films thickness and transparency were measured using optical method, and refractive index and band gap energies were calculated. Electrical conductivity of the ZnO thin films was also determined. AFM images were used to determine surface morphology of produced ZnO thin films. |
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| Keywords: | ZnO RF sputter Thin film Optical properties |
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