Studies of n-type GaAs material properties by anodic current behaviour

The carrier concentrations of n-type GaAs material have been measured by a technique using anodisation in the dark. The results are compared with a theoretical model and with other results based on Schottky barrier reverse breakdown. The technique has also been extended to include surfaces containing more than one type of material and n-type materials of different carrier concentrations. Additionally the technique has been used to make an assessment of the surface quality of the material.