Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam deposition

A new deposition technology, namely the ionized-cluster beam deposition method, was applied to form contacts and interconnects on III–V compound semiconductor devices. Au alloy films deposited by this technology had strong enough adhesion to an insulator layer to be a satisfactory interconnection. A step approximately 8 μm high at an angle of 90° to the semiconductor was covered fully with an Au alloy film obtained by this method. Electrical ohmic contacts for p-type GaP and GaAs were successfully obtained at substrate temperatures of 400 °C and 300 °C respectively without any further annealing process; this resulted in better device characteristics because of the lower process temperatures and also made the device less expensive because of a reduction in fabrication time.