Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance |
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Authors: | Z Djuri? ? Spasojevi? D Tjapkin |
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Affiliation: | Institute for Chemistry, Technology and Metallurgy, Njego?eva 12, 11000, Belgrade, Yugoslavia;Faculty of Electrical Engineering, Bulevar Revolucije 73 and Institute of Physics, 11000, Belgrade, Yugoslavia |
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Abstract: | By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrödinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state.The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p-type bulk at 77°K. |
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