| GaAs基长波长InAs耦合量子点材料的分子束外延生长 |
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| 引用本文： | 朱岩,李密锋,贺继方,喻颖,倪海桥,徐应强,王娟,贺振宏,牛智川.GaAs基长波长InAs耦合量子点材料的分子束外延生长[J].半导体学报,2011,32(8):083001-4. |
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| 作者姓名： | 朱岩 李密锋 贺继方 喻颖 倪海桥 徐应强 王娟 贺振宏 牛智川 |
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| 作者单位： | 中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所 |
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| 基金项目： | 国家基础研究重大项目基金;国家自然科学基金 |
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| 摘 要： | 系统介绍了利用分子束外延方法在纯GaAs材料上生长InAs/GaAs耦合量子点结构。讨论了生长温度和上下两层量子点中InAs的淀积量对于材料发光性质和表面形貌的影响。通过优化生长参数,得到了室温发光波长在1.436μm,FWHM为27meV的耦合量子点材料。第二层量子点的密度在9109到1.41010cm-2之间。耦合量子点结构为拓展GaAs基材料在量子功能器件应用中的发光波长提供了新的途径。
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| 关 键 词： | 分子束外延生长 GaAs 量子点 砷化铟 长波长 矩阵结构 量子功能器件 InAs |
| 收稿时间： | 2/28/2011 7:55:54 PM |
| 修稿时间： | 3/22/2011 4:13:50 PM |
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy |
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| Zhu Yan,Li Mifeng,He Jifang,Yu Ying,Ni Haiqiao,Xu Yingqiang,Wang Juan,He Zhenhong and Niu Zhichuan.GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy[J].Chinese Journal of Semiconductors,2011,32(8):083001-4. |
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| Authors: | Zhu Yan Li Mifeng He Jifang Yu Ying Ni Haiqiao Xu Yingqiang Wang Juan He Zhenhong and Niu Zhichuan |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | InAs bilayer quantum dots molecular beam epitaxy long wavelength photoluminescence |
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