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Effects of interfacial states on the capacitance-voltage characteristics of Pd/SiO2/n-Si Schottky diodes
Affiliation:1. University of Southampton, Southampton, United Kingdom;2. AWE Plc, Reading, United Kingdom;1. Department of Computer Engineering, Inonu University, Malatya, Turkey;2. Department of Mathematics, Namik Kemal University, Tekirdag, Turkey;3. Department of Physics, Inonu University, Malatya, Turkey;4. Department of Electronics and Communication Engineering, Namik Kemal University, Tekirdag, Turkey;1. Faculty of Science, Energy and Environment, King Mongkut’s University of Technology North Bangkok, Rayong Campus, Rayong 21120, Thailand;2. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. School of Energy Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Rayong 21210, Thailand;5. Center of Excellence in Materials Science and Technology, Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;1. Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology, Institute of Nuclear and Physical Engineering, Ilkovičova 3, 812 19 Bratislava, Slovakia;2. Slovak Academy of Sciences, Institute of Electrical Engineering, Dúbravská cesta 9, 841 04 Bratislava, Slovakia;1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju, 561-756, Republic of Korea
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