Importance of the choice of the profile model for ap-n junction in the location of deep levels |
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Authors: | J A Jimenez-Tejada J A Lopez-Villanueva P Cartujo J Vicente J E Carceller |
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Affiliation: | (1) Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;(2) Departamento de Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, Spain |
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Abstract: | The energy levels introduced by Pt in silicon have been measured in a non-abruptp
+-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance.
Two levels have been detected with activation energies of:E
c -E
T = 0.22 eV with acceptor character andE
T -E
v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor
levelE
c -E
T = 0.34 eV was found instead of or besides a donorlike levelE
T -E
v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near
the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not
appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation
of the electrical behavior leads to the non-existence of the acceptor levelE
c −E
T = 0.34 eV located in then-side of the junction. |
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Keywords: | Non-abruptp +- n junction system Si:Pt DLTS |
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