Transformation process of laser ablated PZT thin films |
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Authors: | Hongxue Zhang Hannu Moilanen Antti Uusimäki Seppo Leppävuori Risto Rautioaho |
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Affiliation: | (1) Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland;(2) Present address: Material Engineering Laboratory, University of Oulu, SF-90570 Oulu, Finland |
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Abstract: | Transformation behavior of piezoelectric lead zirconate titanate (PZT) thin films prepared by laser ablation on unheated Al2O3 substrates was investigated within a broad temperature region. As-deposited films were mainly amorphous containing some microcrystalline perovskite and pyrochlore phases. The rhombohedral perovskite was the main phase in the films annealed between 500 and 800°C. These films also contained some pyrochIore, PbTiO3, PbO, and ZrO2. The PbO and ZrO2 disappeared in the optimal annealing temperature interval of 700 to 800°C. Decomposition reactions took place above 800°C due to evaporation of lead and diffusion reactions occurred between substrate and film so that the films annealed at 1100°C consisted of ZrO2, TiO2, and PbO. |
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Keywords: | Laser ablation lead zirconate titanate (PZT) thin film |
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