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Transformation process of laser ablated PZT thin films
Authors:Hongxue Zhang  Hannu Moilanen  Antti Uusimäki  Seppo Leppävuori  Risto Rautioaho
Affiliation:(1) Microelectronics and Material Physics Laboratories, University of Oulu, SF-90570 Oulu, Finland;(2) Present address: Material Engineering Laboratory, University of Oulu, SF-90570 Oulu, Finland
Abstract:
Transformation behavior of piezoelectric lead zirconate titanate (PZT) thin films prepared by laser ablation on unheated Al2O3 substrates was investigated within a broad temperature region. As-deposited films were mainly amorphous containing some microcrystalline perovskite and pyrochlore phases. The rhombohedral perovskite was the main phase in the films annealed between 500 and 800°C. These films also contained some pyrochIore, PbTiO3, PbO, and ZrO2. The PbO and ZrO2 disappeared in the optimal annealing temperature interval of 700 to 800°C. Decomposition reactions took place above 800°C due to evaporation of lead and diffusion reactions occurred between substrate and film so that the films annealed at 1100°C consisted of ZrO2, TiO2, and PbO.
Keywords:Laser ablation  lead zirconate titanate (PZT)  thin film
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