| SOI数模混合集成电路的串扰特性分析 |
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| 引用本文： | 张国艳,黄如,Mansun CHAN,张兴,王阳元.SOI数模混合集成电路的串扰特性分析[J].半导体学报,2002,23(2):203-207. |
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| 作者姓名： | 张国艳 黄如 Mansun CHAN 张兴 王阳元 |
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| 作者单位： | 1. 北京大学微电子所,北京,100871;2. 香港科技大学电子工程系,香港 |
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| 基金项目： | 国家自然科学基金;69910161992; |
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| 摘 要： | 采用二维TMA Medici模拟软件对SOI结构的串扰特性进行了分析.模拟发现随着频率的增加,SOI的埋氧化物对串扰噪声几乎不起隔离作用,同时,连接SOI结构的背衬底可以在很大程度上减小串扰的影响.还对减少串扰的沟槽隔离工艺、保护环及差分结构的有效性进行了比较分析,对一些外部寄生参数对串扰的影响也进行了研究.并给出了SOI结构厚膜和薄膜结构体掺杂浓度对噪声耦合的影响,所得到的结果对设计低噪声耦合的SOI数模混合集成电路具有指导性的作用.
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| 关 键 词： | 串扰 SOI 数模混合集成电路 |
| 文章编号： | 0253-4177(2002)02-0203-05 |
| 修稿时间： | 2001年5月20日 |
Analysis of Cross-Talk Effect in SOI Analog-Digital Mixed Integrated Circuits |
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| Zhang Guoyan ,Huang Ru ,Mansun Chan ,Zhang Xing and Wang Yangyuan.Analysis of Cross-Talk Effect in SOI Analog-Digital Mixed Integrated Circuits[J].Chinese Journal of Semiconductors,2002,23(2):203-207. |
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| Authors: | Zhang Guoyan Huang Ru Mansun Chan Zhang Xing and Wang Yangyuan |
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| Affiliation: | Zhang Guoyan 1,Huang Ru 1,Mansun Chan 2,Zhang Xing 1 and Wang Yangyuan 1 |
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| Abstract: | with two dimensional (2D) TMA medici simulator,the systematic analysis of cross talk behavior is presented for SOI analog digital mixed integrated circuits.It is found that the buried oxide nearly becomes transparent with the increase of frequency and the noise coupling can be decreased to a large extent by contacting the substrate to the ground.At the same time,the efficiency of different strategies for reducing cross talk such as trench isolation,capacitive guard ring and differential structure is studied.Besides,the effect of some extrinsic parameters on the cross talk behavior is also given.The results can serve as a guideline for designing low noise coupling SOI analog digital mixed IC's. |
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| Keywords: | cross talk SOI analog digital mixed IC's |
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