Zinc-doping of InP during chemical beam epitaxy using diethylzinc |
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Authors: | W T Tsang F S Choa N T Ha |
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Affiliation: | (1) AT&T Bell Laboratories Murray Hill, 07974 NJ |
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Abstract: | Diethylzinc was used as ap-type dopant source during InP growth by chemical beam epitaxy. In InP, electrically activated Zn saturated at a concentration
of ∼2.0 × 1018 cm−3 for epilayers grown at 540‡ C. Higher role concentrations were obtained by lowering the growth temperature. However, measurements
with SIMS indicated that very serious Zn diffusion occurred when the Zn concentration appeared to reduce the pyrolysis efficiency
of trimethylindium. This caused a reduction in the InP growth rate and InAs mole fraction in InGaAs epilayers. No Zn “memory
effect≓ was detected in our system. Undoped InP epilayers maintained an n-type background of ∼5 × 1015 cm−3. |
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Keywords: | P-type InP Chemical beam epitaxy Zn-doped InP |
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