| 硅材料的太赫兹波频域特性分析 |
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| 引用本文： | 李建蕊,李九生.硅材料的太赫兹波频域特性分析[J].中国计量学院学报,2008,19(1):70-73. |
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| 作者姓名： | 李建蕊 李九生 |
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| 作者单位： | 中国计量学院,信息工程学院,浙江,杭州,310018 |
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| 摘 要： | 对不同电阻率的N型硅材料(电阻率从5~100Ω.cm)在太赫兹波波段的折射率、消光系数和吸收系数等特性参数,利用返波振荡器(BWO)太赫兹波系统进行了测试、计算和分析,得到N型硅在0.23 THz到0.375 THz频段范围内的光学特性.表明在这一波段N型硅的太赫兹波吸收系数随着电阻率的增加而减小,吸收系数最小值可达到3.39×10-4cm-1.分析表明,它将是潜在的太赫兹波波导的最佳候选材料.
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| 关 键 词： | 返波振荡器 N型硅 吸收系数 载流子 |
| 文章编号： | 1004-1540(2008)01-0070-03 |
| 修稿时间： | 2007年10月16 |
Research on the dielectric properties of silicon in terahertz wave |
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| LI Jian-rui,LI Jiu-sheng.Research on the dielectric properties of silicon in terahertz wave[J].Journal of China Jiliang University,2008,19(1):70-73. |
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| Authors: | LI Jian-rui LI Jiu-sheng |
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| Affiliation: | (College of Information Engineering, China Jiliang University, Hangzhou 310018, China) |
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| Abstract: | The terahertz refractive indices, the absorption spectra and the dielectric functions of various resistivity N-type silicon were measured and compared. By using backward-wave oscillator （BWO）, the terahertz dielectric properties of N type silicon were tested in the frequency range extending from 0.23 to 0. 375 THz. The absorption coefficient of the N type silicon increased as the terahertz wave frequency increaed. The least absorption coefficient was equal to 3.39 × 10^-4 cm^- 1 The results show that the high resistivity silicon is a good candidate for terahertz low loss transmission waveguide. |
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| Keywords: | backward-wave oscillator （BWO） N-type silicon absorption coefficient carriers |
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