Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system |
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Authors: | Jhantu Kumar SahaKeith Leong Adel B. GougamNazir P. Kherani Stefan Zukotynski |
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Affiliation: | a Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, Canada M5S 3G4b Arise Technologies Corporation, 65 Northland Road, Waterloo, Ontario, Canada N2V 1Y8c Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, Canada M5S 3E4 |
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Abstract: | Hydrogenated amorphous silicon (a-Si H) films deposited on crystalline silicon substrates using the DC saddle field (DCSF) plasma enhanced chemical vapor deposition (PECVD) system have been investigated. We have determined the complex dielectric function, ε(E) = ε1(E) + iε2(E) for hydrogenated amorphous silicon (a-Si:H) thin films by spectroscopic ellipsometry (SE) in the 1.5-4.5 eV energy range at room temperature. The results indicate that there is a change in the structure of the a-Si:H films as the thickness is increased above 4 nm. This is attributed to either an increase in the bonded hydrogen content and, or a decrease of voids during the growth of a-Si:H films. The film thickness and deposition temperature are two important parameters that lead to both hydrogen content variation and silicon bonding change as well as significant variations in the optical band gap. The influence of substrate temperature during deposition on film and interface properties is also included. |
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Keywords: | Hydrogenated amorphous silicon Spectroscopic ellipsometry DC saddle field |
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