A theoretical study of the initial stages of the hydrogenation of Si(111) 7×7 |
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Authors: | L. Stauffer C. Minot |
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Affiliation: | (1) Faculté des Sciences et Techniques, Laboratoire de Physique et de Spectroscopie Electronique, URA 1435, 4 rue des Frères Lumière, 68093 Mulhouse Cedex, France;(2) Laboratoire de Chimie Organique Théorique, URA 506, Université Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris Cedex 05, France |
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Abstract: | We have used the periodic extended Hückel method to examine the initial stages of the hydrogenation of Si(111) 7×7. Energies, atomic charges and reduced overlap populations are considered, and we discuss the inequivalence of the adatoms. The adatom dangling bond (DB) level positions with respect to EF are also discussed. On the basis of our results, we propose the following adsorption sequence: first, saturation of the five occupied adatom DBs, then hydrogenation of the remaining atoms by pairs, the hydrogenation of an adatom being coupled with that of a restatom or that of the corner atom. We also show that the atomic charges of the surface become more uniform when the 19 DBs are saturated, and that this modification occurs in discontinuous stages. |
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Keywords: | Hü ckel method hydrogenation of Si(111) 7× 7 adsorption sites |
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