Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC |
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| Authors: | Takashi Goto Hisashi HommaToshio Hirai |
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| Affiliation: | Institute for Materials Research, Tohoku University, Katahira, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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| Abstract: | ![]()
The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in CO2-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp∝ (PO2)n, where n=0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2>5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2<5 kPa. |
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| Keywords: | Chemical vapor deposition Silicon carbide Parabolic Linear parabolic Bubbles CO2 gas |
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