Evidence of bandgap-narrowing in the space-charge layer of heavily doped silicon diodes |
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| Authors: | Lowney J.R. Thurber W.R. |
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| Affiliation: | National Bureau of Standards, Semiconductor Materials & Processes Division, Washington, USA; |
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| Abstract: | The gradient voltage has been measured for seven heavily doped, graded-junction silicon diodes at 300 K. Experimental values up to nearly 0.5 V lower than conventional theoretical predictions have been observed. The lowering is attributed to bandgap-narrowing in the space-charge region. This narrowing is expected to be much larger than in neutral material of the same doping density because of the absence of free-carrier screening. |
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