|
|||||
|
|
Deep levels in undoped Si1?xGex grown by gas-source molecular beam epitaxy |
|
| Authors: | S H Li P K Bhattacharya S W Chung S R Smith W C Mitchel |
| Affiliation: | (1) Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, University of Michigan, 48109-2122 Ann Arbor, Michigan;(2) University of Dayton Research Institute, 300 College Park Drive, 45469-0178 Dayton, Ohio;(3) Materials Directorate, Wright Laboratory, 45433-6533 Wright-Patterson Air Force Base, Ohio |
| Abstract: | Deep levels have been identified and characterized in undoped Si1−xGex alloys grown on silicon substrates by gas-source molecular beam epitaxy. Hole traps in the p-type layers have activation energies ranging from 0.029–0.45 eV and capture cross sections (σ∞ ranging from 10−9 to 10−20 cm2. Possible origins of these centers are discussed. |
| Keywords: | Deep levels gas-source molecular beam epitaxy silicon-germa nium alloys |
| 本文献已被 SpringerLink 等数据库收录！ | |