The electrical properties of phosphorus doped silicon layers obtained by ion implantation through a passivating oxide |
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| Authors: | J. Verjans R. van Overstraeten H. Pattyn R. de Keersmaecker |
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| Affiliation: | Laboratorium Fysica en Elektronica van de Halfgeleiders, Departement Elektrotechniek, Katholieke Universiteit Leuven, Kardinaal-Mercierlaan 94, 3030 Heverlee, Belgium |
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| Abstract: | The electrical properties of phosphorus doped silicon layers obtained by ion implantation through a passivating oxide are studied. The quality of the fabricated n+p diodes is investigated. The influence of the process parameters and of the crystal orientation on the sheet resistance of the n+ layers is studied. It is shown that sheet resistances higher than 1 kΩ/□ with a good linearity and a very low temperature coefficient can easily be obtained in a reproducible way. |
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