Measurement of the boron distribution in 10B-implanted silicon by the (n,α) nuclear reaction |
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| Authors: | G. Mezey Z. Szökefalvi-nagy Cs. Badinka |
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| Affiliation: | Central Research Institute for Physics, Budapest, Hungary;Institute of Biophysics, Biological Research Center of the Hungarian Academy of Sciences, Szeged, Hungary |
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| Abstract: | The 10B(n, α) 7Li reaction was used to determine implanted boron profiles in silicon samples. Instead of a surface barrier detector plastic foils were used and a depth resolution of 230 Å was achieved by combining the method with anodic stripping. This technique allowed us to determine quite low energy boron profiles. |
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