Density and deposition rate of chemical-vapour-deposited boron nitride |
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Authors: | Toshitsugu Matsuda Hiroyuki Nakae Toshio Irai |
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Affiliation: | (1) Japan Metals and Chemicals Co., Ltd, 1719 Ohmama, Yamada-gun, 376-01 Gunma, Japan;(2) The Furukawa Electric Co., Ltd, 9-15 Futaba 2-chome, 142 Shinagawa-ku, Tokyo, Japan;(3) The Research Institute for Iron, Steel and Other Metals, Tohoku University, 980 Sendai, Japan |
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Abstract: | A study is made on the density and deposition rate characteristics of chemical-vapour-deposited boron nitride (CVD-BN) plates synthesized by use of the BCl3-NH3-H2 system at a deposition temperature (T
dep) of 1200 to 2000°C and a total gas pressure (P
tot) of 5 to 60 torr. At aP
tot of 5 torr, all the CVD-BN plates synthesized at eachT
dep above 1300°C had a density greater than 2.O g cm–3, and thus showed no noticeable dependence onT
dep. Over theP
tot range from 10 to 60 torr. on the other hand, the density of the plates reached the maximum of 2.08g cm–3 at aT
dep of 2000° C. AsT
dep was lowered, the density decreased down to a minimum of 1.40 g cm–3 The deposition rate varied with bothT
dep andP
tot and showed a maximum value under a certainP
tot at a givenT
dep. The value ofP
tot where the deposition rate becomes maximum changed depending on theT
dep. The maximum deposition rate was 0.6 mm h–1 for the CVD-BN plates when the density was less than 2.0 g cm–3, and 0.4 mm h–1 when the density was above 2.0 g cm–3 The effects of deposition conditions on the characteristics of density and deposition rate are discussed in terms of the structure and deposition mechanism. |
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