Water bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers |
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Authors: | R H Horng D S Wuu C H Seieh W C Peng M F Huang S J Tsal J S Liu |
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Affiliation: | (1) Institute of Precision Engineering, National Chung Hsing University, 402 Taichung, Taiwan ROC;(2) Institute of Electrical Engineering, Da-Yeh University, 515 Chang-Hwa, Taiwan ROC;(3) Visual Photonics Epitaxy Co., Ltd., 324 Tao-Yuan, Taiwan ROC |
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Abstract: | The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated.
Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this
technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the
dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded
mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous
efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially
no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance. |
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Keywords: | Wafer bonding AlGaInP mirror substrates light-emitting diode (LED) |
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