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注入Nb+的蓝宝石晶体退火前后的光学分析
引用本文:王新练,邹萍,王春芬,阳剑,黄宁康.注入Nb+的蓝宝石晶体退火前后的光学分析[J].原子能科学技术,2006,40(5):584-587.
作者姓名:王新练  邹萍  王春芬  阳剑  黄宁康
作者单位:1.平顶山工学院 ;基础部,河南 ;平顶山 467001;2.四川大学 ;原子核科学技术研究所,四川 ;成都 610064;3. ;洛阳船舶材料研究院,河南 ;洛阳 471039
基金项目:国家自然科学基金资助项目(10176016)
摘    要:将Nb+ 在不同条件下注入不同晶向的蓝宝石晶体,然后,在还原性气氛下退火,并对退火前后的蓝宝石晶体进行光学分析。分析结果表明,Nb+ 注入蓝宝石晶体产生的色心缺陷主要集中在紫外和可见光的高能区。通过对光吸收谱进行高斯拟合及荧光谱分析确认,引起吸收的点缺陷主要是F、F+、F2、F+2、F2+2心等阴离子空位。退火可使这些色心点缺陷减少。退火温度越高,色心点缺陷减少越多,且减少的程度与注入温度有关。此外,700nm处的荧光峰随激发光波长变化而呈现出不同的变化趋势。

关 键 词:离子注入    蓝宝石晶体    光学分析    Nb+" target="_blank">+')">Nb+    退火
文章编号:1000-6931(2006)05-0584-04
收稿时间:2004-12-15
修稿时间:2004-12-152005-07-14

Optical Analysis of Nb+ Implanted Sapphire Before and After Annealing
WANG Xin-lian,ZOU Ping,WANG Chun-fen,YANG Jian,HUANG Ning-kang.Optical Analysis of Nb+ Implanted Sapphire Before and After Annealing[J].Atomic Energy Science and Technology,2006,40(5):584-587.
Authors:WANG Xin-lian  ZOU Ping  WANG Chun-fen  YANG Jian  HUANG Ning-kang
Affiliation:1. Basic Department, Pingdingshan Institute of Technology, Pingdingshan 467001, China; 2.Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;3. Luoyang Spread Material Research Institute, Luoyang 471039, China
Abstract:Sapphire crystals with different orientations were implanted with Nb~ ions in different conditions and annealed at reducing atmosphere.Optical analysis results show that the main optical absorption bands lay in the higher energy sector for all the samples.The absorption curves were evaluated by Gaussian fitting based on the well known F-type centers,which were confirmed by luminescence measurements.The results of Gaussian fitting show that there are F center,F~ center,F_2 center,F~( )_2 center and F~(2 )_2 center in sapphire implanted with Nb~ ions.After annealing at different temperature,all kinds of color centers decrease,the higher the temperature is,the more the defects decrease.The stabilization of the defects also relates with the implantation temperature.In addition,the optical density of luminescence peak at about 700 nm shows different changing with the changing of the exciting light's wavelength.
Keywords:ion implantation  sapphire crystal  optical analysis  Nb~  ions  annealing  
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