| Ni+离子注入AlN薄膜的磁性研究 |
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| 引用本文： | 徐进霞,许磊,刘雅娴.Ni+离子注入AlN薄膜的磁性研究[J].华北水利水电学院学报,2011(4):156-158. |
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| 作者姓名： | 徐进霞 许磊 刘雅娴 |
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| 作者单位： | 武汉东湖学院;华北水利水电学院; |
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| 基金项目： | 河南省教育厅自然科学基础研究计划项目(2009B150016); 河南省科技厅基础与前沿技术研究计划项目(112300410261) |
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| 摘 要： | 用40 kV的Ni+离子在室温下对玻璃衬底上生长的AlN薄膜进行离子注入,注入剂量为5.0×1016 ions/cm2,在N2气氛下分别经400℃,600℃退火1h后,用超导量子干涉仪分析样品磁学特性.结果表明,Ni注入AlN薄膜未退火样品显示铁磁性；经400℃退火后铁磁性增强,居里温度大于室温；经600℃退火后样品铁...
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| 关 键 词： | AlN 稀磁半导体 离子注入 超导量子干涉仪 |
Magnetic Characteristics on Ni~+ Ions Implanted AlN Film |
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| XU Jin-xia,XU Lei,LIU Ya-xian.Magnetic Characteristics on Ni~+ Ions Implanted AlN Film[J].Journal of North China Institute of Water Conservancy and Hydroelectric Power,2011(4):156-158. |
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| Authors: | XU Jin-xia XU Lei LIU Ya-xian |
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| Affiliation: | XU Jin-xia~1,XU Lei~2,LIU Ya-xian~1 (1.Wuhan East Lake Academy,Wuhan 430212,China,2.North China Institute of Water Conservancy and Hydroelectric Power,Zhengzhou 450011,China) |
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| Abstract: | AlN films are prepared by medium-frequency reactive magnetron sputtering at room temperature, and subsequently are implanted with 40 kV Ni ＋ ions at a rate of 5.0 × 10^16 ions/cm2. The magnetism properties of Ni ＋ implanted into A1N films are investigated by superconducting quantum interference device （SQUID）. The 400 ℃ annealing sample shows ferromagnetism, and 600 ℃ annealing sample shows paramagnetism. The magnetism is discussed combined with the structural characteristics given by transmission electron microscopic （TEM）. The results suggest that the p - d hybridization ferromagnetism is the main magnetic mechanism in the Niimplanted AlN films. |
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| Keywords: | AlN dilute magnetic semiconductor ion implantation SQUID |
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