High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s

A high-yield self-alignment technique for submicrometer GaAs m.e.s.f.e.t.s is described. This method allows the production of submicrometre gate lengths and source-drain spacings by means of standard contact photolithography without requiring a particularly fine geometry on the masks. A 0.5 ?m long gate and a source-drain spacing of 2 ?m were obtained.