|
|||||
|
|
1‐nm Si Patterning: Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design (Adv. Funct. Mater. 52/2019) |
|
| Authors: | Vitor R. Manfrinato Fernando E. Camino Aaron Stein Lihua Zhang Ming Lu Eric A. Stach Charles T. Black |
| Abstract: | |
| Keywords: | aberration correction atomic scale EELS electron‐beam lithography line edge roughness nanofabrication plasmonics silicon patterning volume plasmon |