| 砷化镓液相外延片均匀性的研究 |
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| 引用本文： | 王林海,袁炳辉,付浚.砷化镓液相外延片均匀性的研究[J].河北工业大学学报,1994(1). |
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| 作者姓名： | 王林海 袁炳辉 付浚 |
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| 摘 要： | 介绍了在ＧａＡｓ液相外延过程中，通过改变源溶液的配比及处理方法、外延生长温度、降温速率、石墨舟的结构等工艺条件，制做出厚度均匀、掺杂浓度分布均匀的ＧａＡｓ外延片，并确定了比较好的生长工艺条件．这对生长高质量的ＧａＡｓ外延片及制做参数一致性好、可靠性高的化合物半导体器件有一定实际意义．
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| 关 键 词： | 液相外延，降温速率，石墨舟，均匀性，掺杂浓度的均匀性，生长温度，源溶液配比 |
Study on the Homogeneity of LPE Grown GaAs |
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| Wang Linhai, Yuan Binghui, Fu Jun,.Study on the Homogeneity of LPE Grown GaAs[J].Journal of Hebei University of Technology,1994(1). |
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| Authors: | Wang Linhai Yuan Binghui Fu Jun |
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| Affiliation: | Wang Linhai; Yuan Binghui; Fu Jun; |
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| Abstract: | It has been introduced in this paper that,in the process of growing LPE GaAs,the uniform in thickness and doping density uniformly distributed epitaxial GaAs can be obtained from the changing of ratios of source solution and its treatment method,the growing temperature of LPE,the velocity of decreasing temperature,and the structure of graphite boat. A quite good technique for growing GaAs has been established out,which is very important for producing compound semiconductor devices with good homegeneity in parameters and high reliability. |
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| Keywords: | Liquid phase epitaxy (LPE) Velocty of temperature decreasing Graphite boat Homogeneity of doping density Growing temperature Ratios of source solution |
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