| 全离子注入C波段功率单片放大器及内匹配功率单片放大器 |
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| 引用本文： | 宋山松,王福臣.全离子注入C波段功率单片放大器及内匹配功率单片放大器[J].固体电子学研究与进展,1997,17(3):207-211. |
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| 作者姓名： | 宋山松 王福臣 |
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| 作者单位： | 南京电子器件研究所!210016 |
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| 摘 要： | 报道了全平面C波段功率单片放大器及四单片合成放大器研究结果。单片放大器采用全离子注入工艺，均匀性好，平均成品率40％，可靠性高。工作频率4．7—5．2GHZ，中心频率5．0GHz处输出功率2．5W，增益15dB，功率附加效率31．5％。单片放大器芯片面积2．8mm×2．0mm，四路合成的4×MMIC频率范围不变，中心频率4．95GHz处输出功率8．2W，增益13dB，功率附加效率26％，四路合成效率接近80％。实验结果与理论预测基本吻合。
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| 关 键 词： | 微波单片集成电路 功率FET 内匹配 |
C-band GaAs Power MMICs and Internally Matched MMICs |
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| Song Shansong, Wang Fuchen, Chen Kejin, Chen Tangsheng,Jiang Youquan, Lin Jinting.C-band GaAs Power MMICs and Internally Matched MMICs[J].Research & Progress of Solid State Electronics,1997,17(3):207-211. |
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| Authors: | Song Shansong Wang Fuchen Chen Kejin Chen Tangsheng Jiang Youquan Lin Jinting |
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| Abstract: | A two-stage C-band power amplifier MMIC has been designed andfabricated by using ion-implant technology. The MMIC delivers power of 2. 2-2. 5W with gain of 15 dB over the band of 4. 7-5. 2 GHz. Power-added efficiency (PAE)is 31. 5% at 5. 0 GHz. The chip size is 2. 8 mm×2. 0 mm. An amplifier consisted ofsuch four MMICs parallelly connected by using Wilkinson divider/combiner offersoutput power of 7. 2-8. 2 W with gain of 13 dB in the frequency range of 4. 7-5. 2GHz and PAE of 26% at 4. 95 GHz. |
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| Keywords: | MMIC Power FET Internally Matching |
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