In-situ investigation of EMC relaxation behavior using piezoresistive stress sensor |
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| Affiliation: | 1. Robert Bosch GmbH, Reliability Modeling and System Optimization (AE/EDT3) Reutlingen, 72703, Germany;2. Fraunhofer-Institut für Betriebsfestigkeit und Systemzuverlässigkeit LBF, Darmstadt 64289, Germany;3. Mechanical Engineering Department, University of Maryland, College Park, MD 20742, USA;1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;2. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;3. Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, 1205 West State Street, West Lafayette, IN 47907, USA;4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, No. 865, Changning Rd., Shanghai 200050, China;5. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;1. Department of Physics, College of Science, Shanghai University, Shanghai 200444, China;2. Department of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;3. Department of Chemistry, College of Sciences, Shanghai University, Shanghai 200444, China;4. Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China;5. Shanghai Key laboratory of High Temperature Superconductors, China;1. College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;2. Anhui University of Science and Technology, Huainan 230012, China;1. School of Engineering, San Francisco State University, San Francisco, CA 94132, United States;2. Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, United States;3. Department of Electrical and Computer Engineering, Howard University, Washington, DC 20059, United States;1. CALCE Electronics Products and Systems Center, University of Maryland, College Park, MD, USA;2. Institute of Advanced Sciences, Yokohama National University, Yokohama, Japan;3. College of Information Engineering, Capital Normal University, Beijing, China |
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| Abstract: | The relaxation behavior of an epoxy molding compound (EMC) subjected to a constant strain can cause new reliability challenges in automotive electronics. This problem will be exacerbated due to the ever-increasing demand in modern electronics systems for miniaturization with more functionality, yet it has not been studied extensively to mitigate its effect on reliability. In this study, a piezoresistive silicon-based stress sensor is used to understand the stress state in an electronic control unit (ECU), more specifically the relaxation behavior of EMC caused by the storage time of an ECU (i.e., duration between production and actual usage). Mechanical stresses are measured by the piezoresistive stress sensor that is encapsulated in a standard microelectronic 3 × 3 mm land grid array (LGA) package. The relaxation behavior is observed at three different temperatures for 1 week: 75 °C, 100 °C and 125 °C. The relaxation behavior is measured continuously for one more week after cooling the package to room temperature (at 25 °C). An additional test is conducted at 85 °C with 85% relative humidity to investigate the effect of moisture diffusion on the package. The experimental results clearly indicate that the proposed approach can be used for better understanding of the evolution of stresses in molded packages during their lifetime, especially during storage, which in turn can lead to more optimal designs in the future. |
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