Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory |
| |
| Affiliation: | 1. Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany;2. Micronas GmbH Freiburg, Germany;1. Institut Télécom/Télécom ParisTech, CNRS-LTCI UMR 5141, Paris, France;2. Center for computional science, Federal University of Rio Grande, Rio Grande, Brazil;1. School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, 150080, China;2. College of Information and Communication Engineering, Harbin Engineering University, Harbin, 150001, China |
| |
| Abstract: | The investigations on the nanowire width (W) dependence of memory performance including P/E (programming and erasing) speed, data retention time and endurance characteristics in nanowire SONOS flash memory have been performed through the measurement and the device simulation. From measured results, a narrow device has advantages in terms of a fast P/E speed and the endurance characteristics. However, a narrow device has disadvantage in terms of the decreased data retention time. Another disadvantage of a narrow device is expected to the large power consumption due to large GIDL (Gate Induced Drain Leakage) current. The device simulation was performed to explore the causes for a fast P/E speed, an enhanced endurance characteristics and the reduced data retention time in narrow devices. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
