AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz |
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Authors: | Kumar V. Lu W. Schwindt R. Kuliev A. Simin G. Yang J. Asif Khan M. Adesida I. |
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Affiliation: | Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL; |
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Abstract: | AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 /spl mu/m gate length have been fabricated. These 0.12-/spl mu/m gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (f/sub T/) of 121 GHz and maximum frequency of oscillation (f/sub max/) of 162 GHz were measured on these devices. These f/sub T/ and f/sub max/ values are the highest ever reported values for GaN-based HEMTs. |
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