化学机械抛光过程低 k/铜表面材料去除机制及损伤机制研究进展*

针对低k介质/铜表面在平坦化加工中极易造成材料界面剥离、互连线损伤和表面不平整等问题,国内外学者对CMP过程中的材料去除机制以及损伤机制开展了大量的研究工作。对集成电路平坦化工艺——化学机械抛光过程中低k介质/铜界面的力学行为和摩擦损伤特性研究进展进行综述,介绍异质表面的材料去除行为及去除理论研究现状;展望了化学机械抛光过程低k介质/铜表面去除机制研究的研究趋势,即通过对异质界面的分子原子迁移行为研究,揭示异质表面的微观材料去除机制及损伤形成机制,最终寻找到异质表面平坦化及损伤控制方法。

Progress of Material Removal and Damage Mechanisms of the Low-k Dielectrics/Copper Interface During the Planarization Process

In order to solve the problems that the low k dielectric/copper interface during planarization process is easy to cause material interface peeling,interconnect damage and larger surface roughness,scholars at home and abroad have carried out a lot of research work on the material removal mechanism and damage mechanism in chemical mechanical polishing process (CMP) process.The experimental and theoretical studies on the mechanical and friction damage characteristics of the low k dielectric/copper interface were reviewed,as well as the study on the material removal behavior of the heterogeneous interface in the process of CMP.The research progress of material removal mechanism during CMP process was introduced.The research trend of the removal mechanism of low k dielectric/copper interface in CMP process was prospected,that is to reveal the the mechanism of material removal and damage formation by studying the molecular and atomic migration behavior of heterogeneous interface,and finally find the methods of heterogeneous surface planarization and damage control.